Optimizing the thermoelectric performance of InGaZnO thin films depending on crystallinity via hydrogen incorporation
Abstract
The thermoelectric power factor of amorphous (a-IGZO), c-axis aligned crystalline (c-IGZO) and (cc-IGZO) crystal-embedded c-axis aligned crystalline InGaZnO were optimized by performing hydrogen incorporation via post-annealing. Highest power factor was achieved for a-IGZO when annealing with pure N2 was used, while adding 4% H2 in the N2 atmosphere significantly enhanced those of c-IGZO and cc-IGZO. However, the cc-IGZO samples displayed weaker properties compared to both a-IGZO and c-IGZO regardless of the annealing conditions. The presence of H2 was effective in passivating oxygen-related defects for both the c-IGZO and cc-IGZO samples, which translated to better electron transport while maintaining a respectable Seebeck coefficient. On the other hand, the formation of a high amount of oxygen vacancies from annealing with pure N2 was likely responsible not only for the good electrical conductivity of a-IGZO, but also for the relatively good Seebeck coefficients. Establishing the post-annealing conditions to maximize the thermoelectric properties depending on crystallinity paves the way for future commercial transparent IGZO thermoelectric devices.
Journal
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- Applied Surface Science
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Applied Surface Science 527 146791-, 2020-10-15
Elsevier
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Keywords
Details 詳細情報について
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- CRID
- 1050858784329388544
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- NII Article ID
- 120007146511
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- ISSN
- 01694332
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- HANDLE
- 10061/14437
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- Text Lang
- en
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- Article Type
- journal article
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- Data Source
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- IRDB
- Crossref
- CiNii Articles
- KAKEN