Refractive index and extinction coefficient of Si at 400nm between 10 and 300K

• Nagakubo, Akira

• Ogi, Hirotsugu

• Hirao, Masahiko

Abstract

Nagakubo A., Ogi H., Hirao M. "Refractive index and extinction coefficient of Si at 400nm between 10 and 300K", Japanese Journal of Applied Physics, 54(12), 128001 (2015) https://doi.org/10.7567/JJAP.54.128001.

Optical properties of Si are important and widely studied. However, temperature dependence of the refractive index for visible light at low temperatures has not been measured. In this study, we measured the complex refractive index of Si at 400nm between 10 and 300K by picosecond ultrasound spectroscopy. The measured refractive index at room temperature agrees well with reported values, confirming the accuracy of our measurement, and we found that the refractive index at 10 K is smaller than reported values.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 54 (12), 128001-1-128001-3, 2015-10-30

  The Japan Society of Applied Physics

Keywords

• General Physics and Astronomy
• Physics and Astronomy (miscellaneous)
• General Engineering

Details

• CRID: 1050299693923751040
• NII Article ID: 120007149403
• NII Book ID: AA12295836
• DOI: 10.7567/jjap.54.128001
• ISSN: 13474065
• ISSN: 00214922
• ISSN: http://id.crossref.org/issn/13474065
• HANDLE: 11094/84532
• Web Site: http://stacks.iop.org/1347-4065/54/i=12/a=128001/pdf
• Web Site: http://stacks.iop.org/1347-4065/54/i=12/a=128001?key=crossref.626a035f84b9a7af308816e30cb2c94a
• Text Lang: en
• Article Type: journal article
• Data Source:
  • IRDB
  • Crossref
  • CiNii Articles
  • KAKEN