Germanium oxynitride gate dielectrics formed by plasma nitridation of ultrathin thermal oxides on Ge(100)

• Kutsuki, Katsuhiro

• Okamoto, Gaku

• Hosoi, Takuji

• Shimura, Takayoshi

• Watanabe, Heiji

抄録

Katsuhiro Kutsuki, Gaku Okamoto, Takuji Hosoi, Takayoshi Shimura and Heiji Watanabe, "Germanium oxynitride gate dielectrics formed by plasma nitridation of ultrathin thermal oxides on Ge(100)", Appl. Phys. Lett. 95, 022102 (2009) https://doi.org/10.1063/1.3171938.

Germanium oxynitride (GeON) gate dielectrics with surface nitrogen-rich layers were fabricated by plasma nitridation of thermally grown oxides (GeO_2) on Ge(100). Insulating features of ultrathin GeO_2 layers of around 2-nm-thick were found to improve with plasma treatment, in which leakage current was drastically reduced to over four orders of magnitude. Consequently, Au/GeON/Ge capacitors of an equivalent oxide thickness down to 1.7 nm were achieved while keeping sufficient leakage reduction merit. The minimum interface state density values of GeON/Ge structures as low as 3×10^{11} cm^{-2} eV^{-1} were obtained for both the lower and upper halves of the bandgap without any postnitridation treatments. These results were discussed based on the effects of plasma nitridation on a degraded GeO_2 surface for recovering its electrical properties by creating stable nitride layers.

収録刊行物

• Applied Physics Letters

  Applied Physics Letters 95 (2), 022102-, 2009-07-13

  American Institute of Physics

詳細情報

• CRID: 1050581168900342656
• NII論文ID: 120007183052
• NII書誌ID: AA00543431
• HANDLE: 11094/85484
• ISSN: 00036951
• 本文言語コード: en
• 資料種別: journal article
• データソース種別:
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