Interactive Strength between C60 Thin Film and Si(001) and Its Influence on Nano-Scaled Tribology

Access this Article

Author(s)

    • Matsumoto Naohiro
    • Department of Mechanical Engineering, Graduate School of Engineering, Kobe University
    • Suzuki Hiroki
    • Department of Mechanical Engineering, Graduate School of Engineering, Kobe University
    • Kinoshita Hiroshi
    • Department of Mechanical Engineering, Graduate School of Engineering, Kobe University
    • Ohmae Nobuo
    • Department of Mechanical Engineering, Graduate School of Engineering, Kobe University

Abstract

The influences of interactions between C<sub>60</sub> thin films and Si substrates were investigated using atomic force microscopy (AFM). It was found that higher friction coefficient was obtained at the C<sub>60</sub> domains formed on the H-terminated Si(001) substrate and lower ones on the Si(001)-2×1 substrate. Moreover, lowest friction coefficient was found for the C<sub>60</sub> film on the Si(001)-2×1 remained after scratching. Therefore, it is thought that higher interactions between C<sub>60</sub> and Si substrate caused lower friction coefficient of C<sub>60</sub> thin film. The prepared substrate was examined by reflection high energy electron diffraction (RHEED), X-ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy (AES).

Journal

  • Tribology Online

    Tribology Online 3(4), 232-237, 2008

    Japanese Society of Tribologists

Codes

  • NII Article ID (NAID)
    130000067394
  • Text Lang
    ENG
  • Data Source
    J-STAGE 
Page Top