Thermal Stability of SiBCN Films
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- Hayashi Naohiro
- Department of Mechanical Engineering, The University of Tokyo
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- Choi Junho
- Department of Mechanical Engineering, The University of Tokyo
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- Kumagai Tomohisa
- Department of Mechanical Engineering, The University of Tokyo
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- Kato Takahisa
- Department of Mechanical Engineering, The University of Tokyo
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- Kawaguchi Masahiro
- Advanced Material Processing Group, Tokyo Metropolitan Industrial Technology Research Institute
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- Nakao Setsuo
- National Institute of Advanced Industrial Science and Technology (AIST)
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- Ikeyama Masami
- National Institute of Advanced Industrial Science and Technology (AIST)
Abstract
Silicon-Boron-Carbon-Nitride (SiBCN) thin films were deposited on Si (100) substrates by ECR-type ion beam sputtering at a substrate temperature of 200 ºC, and thermal stability of SiBCN films were investigated at 600 ºC, 700 ºC and 800 ºC in air. A composed Si-B-C (Si plate and B4C target) target was used for the film deposition. The composition and chemical bonding structure of the prepared films were investigated by X-ray photoelectron spectroscopy and Fourier transform infrared spectrometer. Si-N bonds increased with increasing silicon content. Surface roughness of SiBCN films decreased with increasing Si content. Hardness of SiBCN films exhibited up to 22 GPa with increasing silicon content. SiBCN films showed no changes in chemical bonds after heating at 600 ºC. Even after heating at 700 ºC, SiBCN films maintained relatively high hardness, whereas hardness of SiBCN films was quietly reduced after heating at 800 ºC. Thermal stability of SiBCN films was improved with increasing Si content.
Journal
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- Tribology Online
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Tribology Online 3 (5), 254-258, 2008
Japanese Society of Tribologists
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Details 詳細情報について
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- CRID
- 1390282680246412160
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- NII Article ID
- 130000067619
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- ISSN
- 18812198
- 1881218X
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- Text Lang
- en
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- Data Source
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- JaLC
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed