A Dislocation-Crystal Plasticity Simulation on FCC Single Crystal Considering Geometrically Necessary Dislocation Density and Incompatibility

• AOYAGI Yoshiteru

  Department of Mechanical Engineering, Keio University

• SHIZAWA Kazuyuki

  Department of Mechanical Engineering, Keio University

Abstract

In the previous paper, the geometrically necessary (GN) incompatibility is newly defined and a new annihilation term of dislocation pairs due to the dynamic recovery is introduced into an expression of dislocation density. Furthermore, a multiscale model of crystal plasticity is proposed by considering the GN dislocation density and incompatibility. However, details of dislocation-crystal plasticity calculation are not given. In this paper, we explain a method of dislocation-crystal plasticity analysis. A finite element simulation is carried out for an f.c.c. single crystal under plane strain tension. It is numerically predicted that micro shear bands are formed at large strain, and sub-GNBs: small angle tilt boundaries are induced along these bands. Furthermore, the annihilation of dislocation pairs and the increase of dislocation mean free path characterizing stage III of work-hardening are computationally predicted.

Journal

• Journal of Computational Science and Technology

  Journal of Computational Science and Technology 2 (1), 197-209, 2008

  The Japan Society of Mechanical Engineers

Keywords

• Plasticity
• Dislocation
• Finite Element Method
• Crystal Plasticity
• Geometrically Necessary Dislocation
• Incompatibility
• Dynamic Recovery

Details

• CRID: 1390282680251213824
• NII Article ID: 130000079283
• DOI: 10.1299/jcst.2.197
• ISSN: 18816894
• Web Site: http://www.jstage.jst.go.jp/article/jcst/2/1/2_1_197/_pdf
• Text Lang: en
• Data Source:
  • JaLC
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed