High-temperature characteristics of SiC Schottky barrier diodes related to physical phenomena

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Author(s)

Abstract

This paper experimentally studies the temperature dependencies of current-voltage (I-V) and capacitance-voltage (C-V) characteristics of SiC power devices, and discusses the relationships between physical phenomena and the measured characteristics in SiC. Two SiC Schottky barrier diodes (SBD) with different specifications were studied for temperatures ranging from 25 to 450°C. Their I-V characteristics show that SBDs indeed function as rectifiers at extremely high temperatures, but forward conduction and reverse blocking performance significantly deteriorates when the temperature exceeds 200°C. C-V characteristics show diffusion potential reduction with temperature, and p-n junction characteristics were found for the junction barrier Schottky structure.

Journal

  • IEICE Electronics Express

    IEICE Electronics Express 5(6), 198-203, 2008

    IEICE - Institute of Electronics, Information and Communication Engineers

Codes

  • NII Article ID (NAID)
    130000087288
  • Text Lang
    ENG
  • Article Type
    journal article
  • ISSN
    1349-2543
  • Data Source
    IR  J-STAGE 
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