Stress engineering of the alkoxide derived ferroelectric thin film on Si wafer

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  • OHNO Tomoya
    Department of Materials Science, Kitami Institute of Technology
  • MALIČ Babara
    Electronic Ceramics Department, Jožef Stefan Institute
  • FUKAZAWA Hiroaki
    Graduate School of Science and Technology, Shizuoka University
  • WAKIYA Naoki
    Graduate School of Science and Technology, Shizuoka University
  • SUZUKI Hisao
    Graduate School of Science and Technology, Shizuoka University
  • MATSUDA Takeshi
    Department of Materials Science, Kitami Institute of Technology
  • KOSEC Marija
    Graduate School of Science and Technology, Shizuoka University

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Abstract

This paper specifically examines control of the residual stress in thin films by design of the stacking structure. For this study, we prepared highly a-, c- oriented PZT(30/70) (: PZT30) thin films using chemical solution deposition (CSD). A PZT30 thin film was deposited on LaNiO3 (LNO)/Pt/Ti/SiO2/Si and LNO/SiO2/Si with different LNO layer thickness to control the thermal stress. An LNO layer was also prepared using CSD on a Pt/Ti/SiO2/Si substrate and SiO2/Si substrate. The residual stresses in the PZT30 thin films were estimated using Raman analysis. Furthermore, the dielectric property of samples was measured using an impedance analyzer. Effects of the residual stress on the dielectric behavior were demonstrated through experimentation.

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