A behavioral model of unipolar resistive RAMs and its application to HSPICE integration

• Akou Nobuo

  Graduate School of Information Science and Technology, Hokkaido University

• Asai Tetsuya

  Graduate School of Information Science and Technology, Hokkaido University

• Yanagida Takeshi

  The Institute of Scientific and Industrial Research, Osaka University

• Kawai Tomoji

  The Institute of Scientific and Industrial Research, Osaka University

• Amemiya Yoshihito

  Graduate School of Information Science and Technology, Hokkaido University

Abstract

We propose a behavioral model of unipolar resistive RAMs (ReRAMs). The model integrates three behavioral characteristics of unipolar ReRAMs; i.e., i) ON/OFF resistive switching characteristics for transient voltage pulses, ii) I-V characteristics exhibiting ON/OFF resistive switching with current compliance, and iii) current-compliance dependence of both ON resistance and OFF threshold currents. The model is described by three nonlinear differential equations with several static functions, which enables us to employ the model in any numerical or circuit simulator. As an example, we integrate the model on HSPICE, and show the simulated results using experimental parameters extracted from fabricated ReRAMs of TiO₂ thin films.

Journal

• IEICE Electronics Express

  IEICE Electronics Express 7 (19), 1467-1473, 2010

  The Institute of Electronics, Information and Communication Engineers

Keywords

• Resistive RAM (ReRAM)
• behavioral model
• SPICE

Details

• CRID: 1390001205212319616
• NII Article ID: 130000401368
• DOI: 10.1587/elex.7.1467
• ISSN: 13492543
• Web Site: http://www.jstage.jst.go.jp/article/elex/7/19/7_19_1467/_pdf
• Text Lang: en
• Data Source:
  • JaLC
  • Crossref
  • CiNii Articles
  • KAKEN
• Abstract License Flag: Disallowed