Chemical trend of Fermi-level shift in transition metal-doped TiO2 films

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  • MATSUMOTO Yuji
    Materials and Structures Laboratory, Tokyo Institute of Technology
  • KATAYAMA Masao
    Materials and Structures Laboratory, Tokyo Institute of Technology
  • ABE Takatoshi
    Materials and Structures Laboratory, Tokyo Institute of Technology
  • OHSAWA Takeo
    Materials and Structures Laboratory, Tokyo Institute of Technology
  • OHKUBO Isao
    Department of Applied Chemistry and JST-CREST, The University of Tokyo
  • KUMIGASHIRA Hiroshi
    Department of Applied Chemistry and JST-CREST, The University of Tokyo
  • OSHIMA Masaharu
    Department of Applied Chemistry and JST-CREST, The University of Tokyo
  • KOINUMA Hideomi
    Graduate School of Frontier Sciences, The University of Tokyo

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The effect of doping a wide range of transition metals (TMs) including V, Cr, Mn, Fe, Co, and Ni into rutile TiO2 films grown on Nb-doped TiO2(110) single-crystal substrates was investigated by photoemission spectroscopy and X-ray absorption spectroscopy. For all TM-doped TiO2 films, the Ti 2p and O 1s core levels were similarly shifted to lower binding energies with increasing film thickness and the shifts were similarly saturated at a film thickness of about 15 nm. These peak shifts could be interpreted in terms of the Fermi level shift, indicating that dopants trap excess electrons from the Ti 3d band like acceptors. The present systematic data revealed that the magnitude of the saturated Fermi level shift correlates well with the effective charge transfer energy.

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