Optimization of ion-beam irradiation for mutagenesis in soybean: effects on plant growth and production of visibly altered mutants

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Author(s)

Abstract

Ion-beam irradiation is attracting increasing attention as a new mutagen. Here, we describe for the first time the dose response and mutagenic effects of ion-beam irradiation in soybean. We irradiated the hilum side of dried mature soybean seeds with 320-MeV carbon ions within a 0.25–20-Gy range. The growth or seed production of the irradiated plants was profoundly affected. In particular, the number of plants that survived until seed-set decreased with the increase of the irradiation dose and was very low in plants irradiated at doses higher than 5.0 Gy, whereas the frequency distribution of the number of seeds produced by each seed-setting plant was not affected by lower doses of irradiation. Based on these results, we produced plant populations irradiated at 2.5 Gy and 5.0 Gy on a large scale to obtain M<sub>2</sub> seeds. Despite the duplicate composition of the soybean genome, which originated from tetraploids, chlorophyll-deficient mutants were detected with a frequency of 0.47% in the M<sub>2</sub> generation of plants irradiated at 5.0 Gy. These results demonstrate that irradiation of the hilum side of dried soybean seeds with carbon-ion beams at a dose range around 2.5–5.0 Gy induces genetic changes while also allowing the production of a considerable number of seed-setting plants, suggesting that these irradiation conditions are suitable for producing a mutant population potentially useful for breeding and/or identifying gene function.

Journal

  • Plant Biotechnology

    Plant Biotechnology 28(3), 323-329, 2011

    Japanese Society for Plant Cell and Molecular Biology

Codes

  • NII Article ID (NAID)
    130000668812
  • NII NACSIS-CAT ID (NCID)
    AA11250821
  • Text Lang
    ENG
  • ISSN
    1342-4580
  • NDL Article ID
    11133877
  • NDL Source Classification
    ZR3(科学技術--生物学--植物)
  • NDL Call No.
    Z54-J126
  • Data Source
    NDL  J-STAGE 
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