Crystallinity and Transport Properties in Fe/MgAl2O4/Fe (001) Epitaxial Magnetic Tunnel Junctions

• Sukegawa H.

  Magnetic Materials Center, National Institute for Materials Science (NIMS)

• Xiu H.

  Magnetic Materials Center, National Institute for Materials Science (NIMS)

• Ohkubo T.

  Magnetic Materials Center, National Institute for Materials Science (NIMS)

• Niizeki T.

  Magnetic Materials Center, National Institute for Materials Science (NIMS)

• Kasai S.

  Magnetic Materials Center, National Institute for Materials Science (NIMS)

• Furubayashi T.

  Magnetic Materials Center, National Institute for Materials Science (NIMS)

• Mitani S.

  Magnetic Materials Center, National Institute for Materials Science (NIMS)

• Inomata K.

  Magnetic Materials Center, National Institute for Materials Science (NIMS)

• Hono K.

  Magnetic Materials Center, National Institute for Materials Science (NIMS)

Bibliographic Information

Other Title

• エピタキシャル　Ｆｅ／ＭｇＡｌ２Ｏ４／Ｆｅ（００１）強磁性トンネル接合における結晶性と伝導特性
• エピタキシャル Fe MgAl2O4 Fe 001 キョウジセイ トンネル セツゴウ ニ オケル ケッショウセイ ト デンドウ トクセイ

Abstract

  We investigated in detail the crystallinity and transport properties of fully epitaxial Fe(001)/spinel MgAl₂O₄(001)/Fe(001) magnetic tunnel junctions (MTJs). We found that high (001) orientation (< 0.20°) and an extremely flat surface (averaged roughness ∼ 0.09 nm) were achieved in the optimized Fe/MgAl₂O₄/Fe MTJs exhibiting tunnel magnetoresistance (TMR) of more than 100% as well as excellent bias-voltage dependence. The misfit dislocation density of the MgAl₂O₄/Fe interface was determined to be precisely 5 × 10^-2 nm^-1. In addition, post-annealing in the preparation process has a significant influence on TMR and its bias-voltage dependence in Fe/MgAl₂O₄/Fe MTJs, suggesting that the crystallinity of the MgAl₂O₄ barrier interfaces was effectively improved by postannealing of each layer. The results provided useful information for understanding and developing epitaxial MTJs with coherent tunneling.

Journal

• Journal of the Magnetics Society of Japan

  Journal of the Magnetics Society of Japan 35 (3), 254-259, 2011

  The Magnetics Society of Japan

Keywords

• magnetic tunnel junctions
• tunnel magnetoresistance
• spinel
• MgAl₂O₄
• thin film

Details

• CRID: 1390001205285512704
• NII Article ID: 130000677008
• NII Book ID: AA12297999
• DOI: 10.3379/msjmag.1104r011
• ISSN: 18822932
• ISSN: 18822924
• NDL BIB ID: 11105268
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I11105268
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
  • KAKEN
• Abstract License Flag: Disallowed