Microstructure and electrical properties of BaTiO3 thin films by modified CSD

DOI 機関リポジトリ HANDLE Web Site Web Site 被引用文献1件 参考文献10件
  • NAGASAKA Masaomi
    Department of Materials Science and Chemical Engineering, Shizuoka University
  • IWASAKI Dai
    Department of Materials Science and Chemical Engineering, Shizuoka University
  • SAKAMOTO Naonori
    Department of Materials Science and Chemical Engineering, Shizuoka University
  • FU Desheng
    Graduate School of Science and Technology, Shizuoka University
  • WAKIYA Naoki
    Department of Materials Science and Chemical Engineering, Shizuoka University
  • SUZUKI Hisao
    Graduate School of Science and Technology, Shizuoka University

この論文をさがす

抄録

0.3 M BaTiO3 (BT) precursor solution was prepared by the modified CSD, in which partially hydrolyzed Ti-alkoxide and Ba precursor solution was reacted in iced water bath to prepare the highly polymerized BT precursor solution. The BT precursor solution was spin-coated on a Pt/Ti/SiO2/Si substrate with and without (100)-oriented LaNiO3 (LNO) thin film electrode. In addition, effect of the pre-annealing at 600°C in O2 atmosphere was elucidated by measuring the electrical properties of the resulting BT thin films deposited by the different annealing process. The results clearly indicated that the 600°C pre-annealing and the LNO thin film electrode are effective to enhance the electrical properties of the resultant BT thin films from the precursor solution by the partial hydrolysis method.

収録刊行物

被引用文献 (1)*注記

もっと見る

参考文献 (10)*注記

もっと見る

関連プロジェクト

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ