Influence of Oxygen Pressure on the Electrical and Optical Properties of Reactively Evaporated Indium Oxide Films.

• Muranaka Shigetoshi

  Faculty of Integrated Human Studies, Kyoto University

• Yamamoto Naoichi

  Faculty of Integrated Human Studies, Kyoto University

書誌事項

タイトル別名

• Influence of Oxygen Pressure on the Ele

抄録

Indium oxide films were reactively deposited at oxygen pressures of 3x10^-3-0.3Pa and at substrate temperatures of 25-200°C. The influence of the oxygen pressure on the electrical resistivity of films and the light transmission was investigated. At a substrate temperature of 25°C, the resistivity of the films was drastically increased with increasing oxygen pressure, while at 100°C, the behavior of the film resistivity was rather complicated. At 150 and 200°C, the resistivity of films was gradually increased as the oxygen pressure increased. The light transmission of films was increased with increasing oxygen pressure at 25-200°C. The dependence of the film resistivity and transmission on the oxygen pressure was discussed based on the structure of films.

収録刊行物

• 粉体および粉末冶金

  粉体および粉末冶金 40 (7), 718-722, 1993

  一般社団法人 粉体粉末冶金協会

キーワード

• Materials Chemistry
• Metals and Alloys
• Industrial and Manufacturing Engineering
• Mechanical Engineering

詳細情報

• CRID: 1390282681285858048
• NII論文ID: 130000819309
• NII書誌ID: AN00222724
• DOI: 10.2497/jjspm.40.718
• ISSN: 18809014
• ISSN: 05328799
• NDL書誌ID: 3837197
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I3837197
• 本文言語コード: en
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