書誌事項
- タイトル別名
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- Growing Method of a Large Synthetic Diamond Single Crystal.
抄録
Crystal growth mass is proportional to an area of a crystal surface. For producing a large diamond single crystal within a short time, we tried to use a large single seed crystal to obtain a single crystal immedately on it by the Temperature Gradient Method. A large single crystal, ten-carat size, was obtained within a short time, but many metal solvent inclusions were not removed in the above-mentioned seed crystal. The distribution of inclusions was relatee to morphologies. When a crystal grows into a hexagonal shape, a density of inclusions is minimized.
収録刊行物
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- 高圧力の科学と技術
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高圧力の科学と技術 2 (4), 315-320, 1993
日本高圧力学会
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詳細情報 詳細情報について
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- CRID
- 1390001204380368640
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- NII論文ID
- 130001598626
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- ISSN
- 13481940
- 0917639X
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可