Theoretical analysis of the damping effect on a transistor laser

• Shirao Mizuki

  Department of Electrical and Electronic Engineering, Tokyo Institute of Technology

• Nishiyama Nobuhiko

  Department of Electrical and Electronic Engineering, Tokyo Institute of Technology

• Sato Noriaki

  Department of Electrical and Electronic Engineering, Tokyo Institute of Technology

• Arai Shigehisa

  Department of Electrical and Electronic Engineering, Tokyo Institute of Technology Quantum Nanoelectronics Research Center

Abstract

The impact of carrier pulling on the modulation characteristics of a transistor laser is discussed. The results of a theoretical analysis of modulation bandwidth and damping effect show that the carrier transport effect obtained by using a transistor laser allows for a gain compression factor of about one-tenth that of a conventional laser (0.7×10¹⁷cm³), as well as for a maximum modulation bandwidth of 45GHz.

Journal

• IEICE Electronics Express

  IEICE Electronics Express 9 (23), 1792-1798, 2012

  The Institute of Electronics, Information and Communication Engineers

Keywords

• semiconductor laser
• transistor laser
• damping effect

Details

• CRID: 1390282680190488320
• NII Article ID: 130002542191
• DOI: 10.1587/elex.9.1792
• ISSN: 13492543
• Web Site: https://www.jstage.jst.go.jp/article/elex/9/23/9_1792/_pdf
• Text Lang: en
• Data Source:
  • JaLC
  • Crossref
  • CiNii Articles
  • KAKEN
• Abstract License Flag: Disallowed