Study of charge retention mechanism for DNA memory FET

• Maeno Shoko

  Department of Materials Science and Chemistry, University of Hyogo

• Matsuo Naoto

  Department of Materials Science and Chemistry, University of Hyogo

• Nakamura Shohei

  Department of Materials Science and Chemistry, University of Hyogo

• Heya Akira

  Department of Materials Science and Chemistry, University of Hyogo

• Takada Tadao

  Department of Materials Science and Chemistry, University of Hyogo

• Yamana Kazushige

  Department of Materials Science and Chemistry, University of Hyogo

• Fukuyama Masataka

  Research Institute for Nanodevice and Bio Systems, Hiroshima University

• Yokoyama Shin

  Research Institute for Nanodevice and Bio Systems, Hiroshima University

抄録

The charge retention mechanism of the λ-DNA molecules with 400bp (136nm) are examined. The DNA solution was dropped on the Si source and drain electrodes with the gap of 120nm. The change of the refresh characteristics by applying the negative voltage to the gate was measured. As a result, it was found that the electron trap remarkably influenced on the hole conduction of the DNA channel. In addition, the DNA has memory ability because the trap and detrap of the electrons can be controlled by the refresh voltage.

収録刊行物

• IEICE Electronics Express

  IEICE Electronics Express 11 (5), 20130900-20130900, 2014

  一般社団法人 電子情報通信学会

キーワード

• DNA
• memory FET
• charge retention
• trap
• detrap

詳細情報

• CRID: 1390001205214420352
• NII論文ID: 130003392270
• DOI: 10.1587/elex.11.20130900
• ISSN: 13492543
• Web Site: https://www.jstage.jst.go.jp/article/elex/11/5/11_11.20130900/_pdf
• 本文言語コード: en
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