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- Arimoto Kohei
- Faculty of Engineering, Kagawa University
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- Shiraga Masahiro
- Faculty of Engineering, Kagawa University
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- Shirai Hideto
- Faculty of Engineering, Kagawa University
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- Takeda Shunsuke
- Faculty of Engineering, Kagawa University
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- Ohmori Masato
- Toyota Technological Institute
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- Akiyama Hidefumi
- Institute for Solid State Physics, University of Tokyo
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- Mochizuki Toshimitsu
- Institute for Solid State Physics, University of Tokyo
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- Yamaguchi Kenzo
- Faculty of Engineering, Kagawa University
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- Miyagawa Hayato
- Faculty of Engineering, Kagawa University
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- Tsurumachi Noriaki
- Faculty of Engineering, Kagawa University
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- Nakanishi Shunsuke
- Faculty of Engineering, Kagawa University
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- Koshiba Shyun
- Faculty of Engineering, Kagawa University
抄録
We have investigated the electrical and optical properties of p-i-n junction structures in which un-doped GaNAs/GaAs multiple quantum wells(MQWs) were sandwiched by p- and n-doped GaAs layers. The samples were formed on the GaAs(001) substrates by plasma assisted molecular beam epitaxy(RF-MBE) using modulated N radical beam method. We have prepared several samples for various GaNAs MQW structures. As the results of I-V characterizations, it is found that threshold voltages of the p-i-n junctions were lowered by insertion of the GaNAs/GaAs MQWs i-layers. The photovoltaic effects were also observed under 1SUN by solar simulator. The conversion efficiency was slightly improved by insertion of the GaNAs/GaAs MQWs, which was confirmed by photo current measurements.
収録刊行物
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- Transactions of the Materials Research Society of Japan
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Transactions of the Materials Research Society of Japan 37 (2), 193-196, 2012
一般社団法人 日本MRS
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詳細情報 詳細情報について
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- CRID
- 1390001205512401408
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- NII論文ID
- 130003399081
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- COI
- 1:CAS:528:DC%2BC38Xht1aksL%2FL
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- ISSN
- 21881650
- 13823469
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- Crossref
- CiNii Articles
- KAKEN
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- 抄録ライセンスフラグ
- 使用不可