Oxide-Powder-Covered Annealing in GaAs

• Yoshida Masato

  Tsukuba Research Laboratory, Hitachi Chemical Co. Ltd.

• Shimizu Kazushi

  Tsukuba Research Laboratory, Hitachi Chemical Co. Ltd.

• Ishibashi Hiroyuki

  Tsukuba Research Laboratory, Hitachi Chemical Co. Ltd.

• Susa Kenzo

  Tsukuba Research Laboratory, Hitachi Chemical Co. Ltd.

抄録

Annealing was performed on GaAs single crystals covered with Ga₂O₃ powder under reduced pressure. The annealing at 820°C produced a thin film of about 2 μm on the crystal surface. The film was confirmed to be an oxide substance containing β-Ga₂O₃. The Hall effect measurement revealed that, with oxide powder, the surface region where the change of electrical properties can be minimized to a few microns while without oxide powder, this figure increases to over 200 μm. This is explained by the capping effect of the film to prevent a thermal decomposition of GaAs.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 29 (7), L1043-L1045, 1990

  公益社団法人 応用物理学会

キーワード

• oxide powder
• GaAs
• annealing
• reduced pressure
• oxide film

詳細情報

• CRID: 1571980078081401216
• NII論文ID: 130003402351
• ISSN: 00214922
• Web Site: https://jlc.jst.go.jp/DN/JALC/00337544758?from=CiNii
• 本文言語コード: en
• データソース種別:
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