Growth of dislocation-free undoped InP crystals.
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Dislocation-free undoped InP crystals were grown by the liquid encapsulation Czochralski method by means of a necking-in procedure. A low temperature gradient near the solid-liquid interface was essential for growth, and a temperature gradient of 55°C/cm enabled the growth of a dislocation-free crystal in a pulling of the 〈111〉 P direction up to a diameter of 15 mm. No etch pits (either D- or S-pit) were observed on the etched surfaces of wafers cut from each position of the crystal. This suggests the absence of microdefects in the crystal.
- Japanese Journal of Applied Physics
Japanese Journal of Applied Physics 19(6), L331-L334, 1980
The Japan Society of Applied Physics