Growth of dislocation-free undoped InP crystals.

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Author(s)

    • Shinoyama Seiji
    • Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
    • Uemura Chikao
    • Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
    • Yamamoto Akio
    • Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
    • Tohno Shun-ichi
    • Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

Abstract

Dislocation-free undoped InP crystals were grown by the liquid encapsulation Czochralski method by means of a necking-in procedure. A low temperature gradient near the solid-liquid interface was essential for growth, and a temperature gradient of 55°C/cm enabled the growth of a dislocation-free crystal in a pulling of the ⟨111⟩ P direction up to a diameter of 15 mm. No etch pits (either D- or S-pit) were observed on the etched surfaces of wafers cut from each position of the crystal. This suggests the absence of microdefects in the crystal.

Journal

  • Japanese Journal of Applied Physics

    Japanese Journal of Applied Physics 19(6), L331-L334, 1980

    The Japan Society of Applied Physics

Codes

  • NII Article ID (NAID)
    130003462844
  • Text Lang
    ENG
  • ISSN
    0021-4922
  • Data Source
    J-STAGE 
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