Lateral Epitaxial Growth in Poly-Si Film over SiO<SUB>2</SUB> from Single-Si Seed by Scanning CW Ar Laser Annealing

• Sakurai Junji

  Fujitsu Limited

• Kawamura Seiichiro

  Fujitsu Limited

• Mori Haruhisa

  Fujitsu Limited

• Nakano Motoo

  Fujitsu Limited

抄録

CVD poly-Si films 0.4 μm thick were deposited on (100) Si-substrate having a thermally grown SiO₂ 0.4 μm thick. The samples were then annealed to melt and recrystallize the poly-Si films with scanning cw Ar laser. Laser-annealing in a unidirectional mode with overlapped beams was found to produce a single crystal (100) Si as large as 36 μm in maximum width and more than 140 μm in length in the poly-Si film on SiO₂ along the Si seed. However, the lateral epitaxial growth was restricted in size by formation of long crystallites from unannealed poly-Si peripheries and of grain boundaries probably due to the stresses generated by the poly-Si/SiO₂ interface.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 20 (3), L176-L178, 1981

  公益社団法人 応用物理学会

詳細情報

• CRID: 1573387452913816320
• NII論文ID: 130003463496
• ISSN: 00214922
• Web Site: https://jlc.jst.go.jp/DN/JALC/00297407490?from=CiNii
• 本文言語コード: en
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