Effect of AlN Buffer Layer on AlGaN/α-Al<SUB>2</SUB>O<SUB>3</SUB> Heteroepitaxial Growth by Metalorganic Vapor Phase Epitaxy

• Koide Yasuo

  Department of Electronics, School of Engineering, Nagoya University

• Itoh Nobuo

  Department of Electronics, College of Engineering, University of Osaka Prefecture

• Itoh Kenji

  Department of Electronics, School of Engineering, Nagoya University

• Sawaki Nobuhiko

  Department of Electronics, School of Engineering, Nagoya University

• Akasaki Isamu

  Department of Electronics, School of Engineering, Nagoya University

Abstract

Al_xGa_1−xN(0≤x≤0.4) films grown on sapphires are found to be composed of many mosaic crystallites with various orientations by means of double-crystal X-ray diffractometry. This fluctuation of orientation can be considerably reduced and the surface morphology (smoothness and uniformity) of the film can be remarkably improved by the preceding deposition of the AlN buffer layers. A phenomenological model, which can explain the effect of the AlN buffer layer on the surface morphology and the crystalline quality of AlGaN films, is proposed.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 27 (7), 1156-1161, 1988

  The Japan Society of Applied Physics

Keywords

• AlGaN
• AlN buffer layer
• metalorganic vapor phase epitaxy
• X-ray diffraction
• mosaic structure
• orientation distribution
• nucleus

Details

• CRID: 1573668927891459456
• NII Article ID: 130003467784
• ISSN: 00214922
• Web Site: https://jlc.jst.go.jp/DN/JALC/00337514409?from=CiNii
• Text Lang: en
• Data Source:
  • CiNii Articles