Oxidation Site of Polycrystalline Silicon Surface Studied Using Scanning Force/Tunneling Microscope (AFM/STM) in Air

J-STAGE
  • Sugawara Yasuhiro
    Department of Physics, Faculty of Science, Hiroshima University
  • Fukano Yoshinobu
    Department of Physics, Faculty of Science, Hiroshima University
  • Nakano Akihiko
    Analysis Center, VLSI Development Laboratories, IC Group, Sharp Corporation
  • Ida Tohru
    Analysis Center, VLSI Development Laboratories, IC Group, Sharp Corporation
  • Morita Seizo
    Department of Physics, Faculty of Science, Hiroshima University

抄録

The oxidation site of the polysilicon surface was studied using a scanning force/tunneling microscope in air. In the case of a polysilicon surface without an oxidation annealing process, the tunneling conductance at the grain boundary decreased faster than that far from the grain boundary. As a result, we confirmed that the area at the grain boundary was preferentially oxidized. On the other hand, in the case of a polysilicon surface with oxidation annealing process, we confirmed that the preferential oxidation of the grain boundary was suppressed.

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