Atomic Force Microscope Combined with Scanning Tunneling Microscope [AFM/STM]

• Morita Seizo

  Department of Physics, Faculty of Science, Hiroshima University

• Sugawara Yasuhiro

  Department of Physics, Faculty of Science, Hiroshima University

• Fukano Yoshinobu

  Department of Physics, Faculty of Science, Hiroshima University

抄録

Recently we developed a scanning force/tunneling microscope (AFM/STM), wherein the scanning tunneling microscope (STM) is combined with the atomic force microscope (AFM). This AFM/STM system enables investigation of the surface corrugation by AFM and the local conductance by STM in the same microscopic area with nanometer resolution. In the present paper, we report on the AFM/STM application to the characterization of semiconductor surfaces in air with inhomogeneous conductance and with a thin oxide film. As a result, the potential of the AFM/STM for investigating inhomogeneous conductance of ion-implanted Si(100) surfaces was clarified. Moreover the process dependence of oxidation sites on poly-Si surfaces and the voltage-dependent phenomena of thin Si oxide such as contact electrification, corona discharge and dielectric breakdown were studied.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 32 (6), 2983-2988, 1993

  公益社団法人 応用物理学会

キーワード

• scanning force/tunneling microscope
• AFM/STM
• ion-implanted Si
• poly-Si
• thin Si oxide
• contact electrification
• corona discharge
• dielectric breakdown

詳細情報

• CRID: 1571698603121251584
• NII論文ID: 130003473559
• ISSN: 00214922
• Web Site: https://jlc.jst.go.jp/DN/JALC/00337588370?from=CiNii
• 本文言語コード: en
• データソース種別:
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