Stable-Unstable Phase Transition of Densely Contract-Electrified Electrons on Thin Silicon Oxide

• Morita Seizo

  Department of Physics, Faculty of Science, Hiroshima University

• Sugawara Yasuhiro

  Department of Physics, Faculty of Science, Hiroshima University

• Fukano Yoshinobu

  Department of Physics, Faculty of Science, Hiroshima University

• Uchihashi Takayuki

  Department of Physics, Faculty of Science, Hiroshima University

• Okusako Takahiro

  Department of Physics, Faculty of Science, Hiroshima University

• Chayahara Ayumi

  Department of Physics, Faculty of Science, Hiroshima University

• Yamanishi Yoshiki

  Advanced Technology Research Laboratories, Sumitomo Metal Industries, Ltd.

• Oasa Takahiko

  Advanced Technology Research Laboratories, Sumitomo Metal Industries, Ltd.

抄録

Using reproducible and controllable contact electrification, we studied the charge dissipation of densely deposited electrons on a thin silicon oxide surface by electrostatic force measurement using a modified atomic force microscope. As a result, by increasing the density of contact-electrified electrons, we observed an appearance of a stable state of the contact-electrified electrons and its disappearance due to charge dissipation, i.e., a kind of stable-unstable phase transition. We also observed saturation of the deposited electron density with the spatial spread of deposited electrons.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 32 (12), L1852-L1854, 1993

  公益社団法人 応用物理学会

キーワード

• contact electrification
• stable state
• unstable state
• phase transition
• silicon oxide
• charge dissipation
• densely deposited electrons
• atomic force microscope

詳細情報

• CRID: 1572824503027466624
• NII論文ID: 130003473916
• ISSN: 00214922
• Web Site: https://jlc.jst.go.jp/DN/JALC/00337592711?from=CiNii
• 本文言語コード: en
• データソース種別:
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