Vapor Phase Crystal Growth of Zinc Selenide under Controlled Partial Pressure and Its Crystal Structure

• Kiyosawa Teruo

  Graduate School, Tohoku University

• Igaki Kenzo

  Department of Materials Science, Faculty of Engineering, Tohoku University

• Ohashi Nobumitsu

  Department of Materials Science, Faculty of Engineering, Tohoku University

抄録

Zinc selenide single crystals were grown by the sublimation method under variously controlled partial pressures of one of the constituent elements using a closed quartz ampule with the pure Zn or Se reservoir at one end.<BR>The relation between the partial pressure of Zn or Se₂, which was estimated from the reservoir temperature, and the transport rate of solid ZnSe from the charged source to the growth chamber via the vapor phase was found as follows :<BR>(1) In the case of low partial pressure of Zn or Se₂, i.e. low reservoir temperature, the transport rate was independent of partial pressure.<BR>(2) In the case of high Zn partial pressure, it was proportional to the −3rd power of Zn partial pressure.<BR>(3) For the high Se₂ partial pressure, it was proportional to the −3⁄2th power of Se₂ partial pressure.<BR>These experimental results were compared with the calculated results which were obtained on the assumption that the rate determining procedure for the transport process was the diffusion in the vapor phase, and partial pressure regions showing good agreement between the experimental and calculated results were disclosed.<BR>The grown crystals had always a crystal structure of the zincblende type and their typical shapes were columnar with an equilateral hexagonal cross section grown in one of the ⟨111⟩ directions and also plate-like grown in two of the ⟨111⟩ directions.<BR>X-ray diffraction photographs by the oscillating crystal method and the Weissenberg method revealed two types of twin structures caused by growth faults ; one due to the growth faults in only one of the ⟨111⟩ directions which corresponded to the growth direction of the columnar crystals and the other due to the growth faults in at least two of the ⟨111⟩ directions which corresponded to growth directions of the plate-like crystals.

収録刊行物

• Transactions of the Japan Institute of Metals

  Transactions of the Japan Institute of Metals 13 (4), 248-254, 1972

  社団法人 日本金属学会

キーワード

• General Engineering

詳細情報

• CRID: 1390282680093681280
• NII論文ID: 130003485156
• DOI: 10.2320/matertrans1960.13.248
• ISSN: 24324701
• ISSN: 00214434
• Web Site: https://www.jstage.jst.go.jp/article/matertrans1960/13/4/13_4_248/_pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可