Study of high photo-speed top surface imaging process using chemically amplified resist.

• Mori Shigeyasu

  SHARP Corporation

• Matsuzawa Nobuyuki

  Yokohama Research Center, Association of Super-Advanced Electronics Technologies (ASET) 292

• Kaimoto Yuko

  Yokohama Research Center, Association of Super-Advanced Electronics Technologies (ASET) 292

• Endo Masayuki

  Yokohama Research Center, Association of Super-Advanced Electronics Technologies (ASET) 292

• Matsuo Takahiro

  Yokohama Research Center, Association of Super-Advanced Electronics Technologies (ASET) 292

• Morisawa Taku

  Yokohama Research Center, Association of Super-Advanced Electronics Technologies (ASET) 292

• Kuhara Koichi

  Yokohama Research Center, Association of Super-Advanced Electronics Technologies (ASET) 292

• Sasago Masaru

  Yokohama Research Center, Association of Super-Advanced Electronics Technologies (ASET) 292

書誌事項

タイトル別名

• Study of High Photo-speed Top Surface I

抄録

A positive high photo-speed top surface imaging (TSI) process for 193-nm lithography has been achieved by incorporation a chemically amplified resist consisting of photo-acid generator (PAG), cross-linker, and base polymer in the process. We found that we have to use both a chemically amplified resist with a PAG which generates acids having higher molecular weights, and a base polymer having a higher molecular weight. The photo-speed strongly depends on the post exposure bake (PEB) temperature. A required photo-speed of <5.0mJ/cm² was obtained with PEB at 130°C under this process. We were unable to observe the trade-off between line edge roughness (LER) and photo-speed. The process achieves a resolution of 0.12μmL/S without the use of any resolution enhanced technique (RET), and 0.09μmL/S when an alternative phase shifting mask is used The process margin has a depth of focus of 0.5μm for 0.12μmL/S without RET and 0.7μm for 0.09 μmL/S with the alternative phase shifting mask. Sub-0.10-μm patterns were produced by using this TSI process for 193-nm lithography.

収録刊行物

• Journal of Photopolymer Science and Technology

  Journal of Photopolymer Science and Technology 11 (4), 613-618, 1998

  フォトポリマー学会

キーワード

• ArF lithography
• silylation
• photo-speed
• chemically amplified resist
• line edge roughness
• process margin

詳細情報

• CRID: 1390282679302606976
• NII論文ID: 130003488115
• NII論文ID: 40005351843
• NII書誌ID: AA11576862
• DOI: 10.2494/photopolymer.11.613
• COI: 1:CAS:528:DyaK1cXkslKjsLs%3D
• ISSN: 13496336
• ISSN: 09149244
• NDL書誌ID: 4525943
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4525943
• Web Site: http://www.jstage.jst.go.jp/article/photopolymer1988/11/4/11_4_613/_pdf
• 本文言語コード: en
• データソース種別:
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• 抄録ライセンスフラグ: 使用不可