耐熱性ファインセラミックスの接合に関する研究 第7報 Si3N4と金属接合部における反応層およびCu富化層の形成現象

DOI

書誌事項

タイトル別名
  • Study on bonding of heat-resisting fine ceramics (Report7). Formation of reaction layer and cu enriched layer in Si3N4 to metal joints.
  • Study on Bonding of Heat-Resisting Fine Ceramics (Report 7)
  • 耐熱性ファインセラミックスの接合に関する研究(第7報)

抄録

Bonding of Si3N4 to W using Cu-5%Cr, Cu-1%Nb, Cu-3%V, Cu-5%Ti and Cu-10%Zr insert metals was conducted in a vacuum chamber. Thickness of the reaction layer formed at the interface between Si3N4 and insert layers was increased with increasing bonding temperature and holding time. SEM observation revealed that reaction layer grew toward the both sides of bonding interface. Growth of reaction layer toward the Cu enriched layer was attributed to the reaction between N and Cr, Nb, V, Ti or Zr, and that toward Si3N4 was attributed to the solid state reaction between Si3N4 and Cr, Nb, V, Ti or Zr in the reaction layer. Formation of Cu enriched layer was explained as a consequence of decrease in the contents of Cr, Nb, V, Ti and Zr in the melted insert metal by the reaction with Si3N4.

収録刊行物

詳細情報

  • CRID
    1390282679703240192
  • NII論文ID
    130003764867
  • DOI
    10.2207/qjjws.7.531
  • ISSN
    24348252
    02884771
  • 本文言語コード
    ja
  • データソース種別
    • JaLC
    • Crossref
    • CiNii Articles
  • 抄録ライセンスフラグ
    使用不可

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