ＰＥＣＶＤ成膜装置内での粒子汚染現象に対する操作流量の影響

DOI Web Site 被引用文献1件 参考文献11件
  • 林 豊
    広島大学大学院工学研究科物質化学システム専攻
  • 島田 学
    広島大学大学院工学研究科物質化学システム専攻
  • 奥山 喜久夫
    広島大学大学院工学研究科物質化学システム専攻
  • 柏原 伸紀
    科学技術振興機構研究成果活用プラザ
  • Setyawan Heru
    Innovation Plaza Hiroshima, JST (Japan Science and Technology Agency)

書誌事項

タイトル別名
  • Effects of Gas Flow Rate on Particulate Contamination in a PECVD Reactor
  • PECVDセイマク ソウチ ナイ デ ノ リュウシ オセン ゲンショウ ニ タイスル ソウサ リュウリョウ ノ エイキョウ

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抄録

The effects of gas flow rate on the contamination by dust particles in an RF plasma reactor were studied experimentally. A mixture of tetraethylorthosilicate vapor, oxygen and nitrogen were fed into the reactor to fabricate SiO2 thin film. Dust particles generated in the plasma were visualized by a laser light scattering technique. Particle size was measured by a laser particle counter, and particle deposition for the film was observed by a scanning electron microscope. The dust particles were found to be trapped in a certain region in the reactor. The amount and size of the trapped particles decreased with increasing gas flow rate. The particle contamination on the film surface also decreased with increasing gas flow rate. At a high flow rate, however, dust particles embedded into the film were observed. In addition, high gas flow rate degraded the film uniformity. It is considered from the above results that a proper selection of gas flow rate is important to decrease particulate contamination as much as possible.

収録刊行物

  • 粉体工学会誌

    粉体工学会誌 42 (2), 105-109, 2005

    一般社団法人 粉体工学会

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