Preparation, Structures, and Physical Properties of Tetrakis(alkylthio)tetraselenafulvalene (TTC<i>n</i>-TSeF, <i>n</i> = 1–15)

• Gunzi Saito

  Research Institute, Meijo University

• Yukihiro Yoshida

  Research Institute, Meijo University

• Hidenobu Murofushi

  Institute for Solid State Physics, The University of Tokyo

• Naoko Iwasawa

  Institute for Solid State Physics, The University of Tokyo

• Takaaki Hiramatsu

  Research Center for Low Temperature and Materials Sciences, Kyoto University

• Akihiro Otsuka

  Division of Chemistry, Graduate School of Science, Kyoto University

• Hideki Yamochi

  Division of Chemistry, Graduate School of Science, Kyoto University

• Kimio Isa

  Faculty of Education and Regional Studies, University of Fukui

• Eriko Mineo-Ota

  Department of Chemistry, Faculty of Science, Ochanomizu University

• Michiko Konno

  Department of Chemistry, Faculty of Science, Ochanomizu University

• Takehiko Mori

  Institute for Molecular Science

• Ken-ichi Imaeda

  Institute for Molecular Science

• Hiroo Inokuchi

  Institute for Molecular Science

抄録

A series of tetrakis(alkylthio)tetraselenafulvalene compounds (TTCn-TSeF, n = 1–15) were prepared by a one-step reaction between dialkyl disulfide and tetralithiated TSeF. Molecular properties (redox potentials and optical absorptions in solution) and solid-state properties (thermal behaviors, electric conductivities, and molecular and crystal structures for n = 1 and 10) were studied. TTCn-TSeF compounds are weak electron donor molecules and characterized by small on-site Coulomb repulsion. TTC1-TSeF has a high-dimensional conduction network owing to the presence of high-dimensional heteroatomic contacts, “Atomic-Wire Effect.” The π-moieties of TTC10-TSeF were fastened by the alkyl chains (“Fastener Effect”) to form π-columns and there are a variety of short heteroatomic contacts resulting in two-dimensional electronic structure. Electrical conductivity exhibited peculiar enhancement for n = 1 and 7 ≤ n ≤ 14 owing to the presence of high-dimensional conduction paths. These compounds may manifest high carrier mobility, and are good candidates for the field-effect transistor channel based on the advantageous features: low dark conductivity, low donor ability, on-site Coulomb repulsion energy, high-dimensional π-electron structure, and high solubility in organic solvents.

収録刊行物

• Bulletin of the Chemical Society of Japan

  Bulletin of the Chemical Society of Japan 83 (4), 335-344, 2010-03-26

  Oxford University Press (OUP)

キーワード

• General Chemistry

詳細情報

• CRID: 1360565169050171520
• NII論文ID: 130004152704
• DOI: 10.1246/bcsj.20090240
• ISSN: 13480634
• ISSN: 00092673
• Web Site: https://academic.oup.com/bcsj/article-pdf/83/4/335/56271671/bcsj.20090240.pdf
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