Low Energy Metal Ion Beam Production with a Modified Freeman-Type Ion Source for Development of Novel Catalysts

• Yoshimura S.

  Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, Japan

• Kiuchi M.

  Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, Japan National Institute of Advanced Industrial Science and Technology (AIST), Japan

• Nishimoto Y.

  Department of Applied Chemistry, Graduate School of Engineering, Osaka University, Japan

• Yasuda M.

  Department of Applied Chemistry, Graduate School of Engineering, Osaka University, Japan

• Baba A.

  Department of Applied Chemistry, Graduate School of Engineering, Osaka University, Japan

• Hamaguchi S.

  Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, Japan

抄録

Interactions of indium (In) and silicon (Si) atoms have been found to catalyze certain organic chemical reactions with high efficiency. In a recent paper [S. Yoshimura, et al., Appl. Surf. Sci., 257, 192 (2010)], it has been demonstrated that an In injected SiO₂ thin film formed under specific ion beam conditions catalyzes a reaction of benzhydrol with acetylacetone. In this study a technique to implant bismuth (Bi) ions into SiO₂ thin films has been developed with highly controlled ion doses and injection energies for the formation of thin films that promote Bi(III) catalysis in organic chemistry. For this purpose, the Freeman-type ion source of our beam system was modified with a new sputtering target. In addition, sticking probabilities of Bi have been obtained with the use of a quartz crystal microbalance. Although efficiency of catalytic reactions by a Bi implanted SiO₂ thin film is yet to be improved, the technique provides a Bi-Si based novel catalyst of a thin film type. [DOI: 10.1380/ejssnt.2012.139]

収録刊行物

• e-Journal of Surface Science and Nanotechnology

  e-Journal of Surface Science and Nanotechnology 10 (0), 139-144, 2012

  公益社団法人 日本表面真空学会

キーワード

• Ion implantation
• Bismuth, Gold
• Indium
• Catalysis

詳細情報

• CRID: 1390282680163296256
• NII論文ID: 130004438798
• NII論文ID: 120006955426
• DOI: 10.1380/ejssnt.2012.139
• ISSN: 13480391
• HANDLE: 11094/78470
• Web Site: https://www.jstage.jst.go.jp/article/ejssnt/10/0/10_0_139/_pdf
• 本文言語コード: en
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