Low Energy Indium or Gallium Ion Implantations to SiO<sub>2 </sub>Thin Films for Development of Novel Catalysts

DOI HANDLE Web Site 参考文献4件 オープンアクセス
  • Yoshimura Satoru
    Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University
  • Kiuchi Masato
    Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University National Institute of Advanced Industrial Science and Technology (AIST)
  • Nishimoto Yoshihiro
    Department of Applied Chemistry, Graduate School of Engineering, Osaka University
  • Yasuda Makoto
    Department of Applied Chemistry, Graduate School of Engineering, Osaka University
  • Baba Akio
    Department of Applied Chemistry, Graduate School of Engineering, Osaka University
  • Hamaguchi Satoshi
    Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University

抄録

In an earlier paper [S. Yoshimura et al., Appl. Surf. Sci. 257, 192 (2010)], it has been demonstrated that indium (In) implanted silicon dioxide (SiO2) thin films catalyze a reaction of benzhydrol with acetylacetone. In this study, it is found that the threshold In ion incident energy for manifestation of the catalytic effect exists between 400 and 470 eV. Furthermore, a technique to implant gallium (Ga) to SiO2 films has been developed with highly controlled doses and injection energies for the formation of thin films that promote Ga catalysts. The efficiency of catalytic reactions by Ga implanted SiO2 thin films is yet to be improved. Unlike In implanted SiO2, the reason why no significant reaction was observed in the case of Ga implanted SiO2 films examined in this study seems that the Ga ion energy was so low that deposited surface Ga atoms should lack interactions with Si atoms for the manifestation of catalytic reaction. [DOI: 10.1380/ejssnt.2014.197]

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