Hydrogen Response of Pd Schottky Diodes Formed on AlGaN/GaN Heterostructure

DOI Web Site 被引用文献1件 参考文献10件
  • Matsuo Kazushi
    Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Japan
  • Kimura Takeshi
    Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Japan
  • Hasegawa Hideki
    Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Japan
  • Hashizume Tamotsu
    Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Japan

抄録

Basic H2 gas-sensing characteristics of Pd Schottky diodes formed on the AlGaN/GaN heterostructure were investigated in vacuum. By introducing a novel surface control process to reduce reverse leakage currents, an unprecedented high H2 sensitivity was achieved where 1 Torr hydrogen caused five orders of magnitude change of current. Surprisingly, the surface control process did not change the C-V characteristics which showed an unexpectedly large shift 1000 mV on H2 exposure. Transient waveforms were almost exponential for the logarithm of current, and response speed increased with increase of H2 pressure and temperature. These results were explained in terms of Schottky barrier height due to adsorption of atomic hydrogen generated by Pd together with a due consideration of the current transport mechanism under reverse bias. [DOI: 10.1380/ejssnt.2005.314]

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