Resistance measurements of metallic silicide nanowires on a Si substrate with a four-tip scanning tunneling microscope

• Okino Hiroyuki

  Department of Physics, School of Science, University of Tokyo, Japan

• Matsuda Iwao

  Department of Physics, School of Science, University of Tokyo, Japan

• Hobara Rei

  Department of Physics, School of Science, University of Tokyo, Japan

• Hosomura Yoshikazu

  Department of Physics, School of Science, University of Tokyo, Japan

• Hasegawa Shuji

  Department of Physics, School of Science, University of Tokyo, Japan

• Bennett P. A.

  Department of Physics and Astronomy, Arizona State University, USA

Abstract

We have measured electrical resistance of individual epitaxial CoSi₂ nanowires (NWs) formed on a Si(110) surface in situ in ultrahigh vacuum, by two-, three-, and four-point probe methods using a multi-tip scanning tunneling microscope at room temperature. The NWs were electrically isolated from the substrate by a Schottky barrier in-between with zero-bias resistance of approximately 10⁷ Ω. Contact resistance between a W tip and a NW was as small as several tens Ω. The resistivity of the NWs was ca. 30 μΩcm, which is similar to that of high-quality epitaxial CoSi₂ films. The oxidation of the NW surface had negligible influence on the resistance, meaning marginal carrier scattering at the NW surface. [DOI: 10.1380/ejssnt.2005.362]

Journal

• e-Journal of Surface Science and Nanotechnology

  e-Journal of Surface Science and Nanotechnology 3 362-366, 2005

  The Japan Society of Vacuum and Surface Science

Keywords

• Nano-wires
• Multi-probe method
• Electrical transport
• Cobalt
• Silicides
• Si(110)
• Multi-tip scanning tunneling microscope

Details

• CRID: 1390282680164388096
• NII Article ID: 130004438966
• DOI: 10.1380/ejssnt.2005.362
• ISSN: 13480391
• Web Site: http://www.jstage.jst.go.jp/article/ejssnt/3/0/3_0_362/_pdf
• Text Lang: en
• Data Source:
  • JaLC
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed