Characterization of Fe Silicide Growth on Si(111) Surface by Weissenberg RHEED

Access this Article

Author(s)

    • Abukawa T.
    • Institute for Multidisciplinary Research for Advanced Materials, Tohoku University, Japan
    • Fujisaki D.
    • Institute for Multidisciplinary Research for Advanced Materials, Tohoku University, Japan
    • Takahashi N.
    • Institute for Multidisciplinary Research for Advanced Materials, Tohoku University, Japan
    • Sato S.
    • Institute for Multidisciplinary Research for Advanced Materials, Tohoku University, Japan

Abstract

Fe silicide growth on a Si(111) surface has been characterized by Weissenberg RHEED. The silicides were grown in the present study via two fundamental methods, reactive deposition epitaxy (RDE) and solid phase epitaxy (SPE), with various deposition amounts of Fe. The silicide species and its epitaxial orientation were determined from three-dimensional diffraction patterns obtained using Weissenberg RHEED. It was found that only α-FeSi<sub>2</sub> islands grew by the RDE method. Both α-FeSi<sub>2</sub> and β-FeSi<sub>2</sub> islands grew by the SPE method. The proportion of β-FeSi<sub>2</sub> increased with increasing Fe deposition amount, until only β-FeSi<sub>2</sub> was finally observed. The present results could be explained by the surface or interface reaction model wherein the reaction at the Si surface and at the Fe/Si solid interface caused α-FeSi<sub>2</sub> and β-FeSi<sub>2</sub> growth, respectively. [DOI: 10.1380/ejssnt.2009.866]

Journal

  • e-Journal of Surface Science and Nanotechnology

    e-Journal of Surface Science and Nanotechnology (7), 866-870, 2009

    The Surface Science Society of Japan

Codes

Page Top