Strain of GaAs/GaAsP Superlattices Used as Spin-Polarized Electron Photocathodes, Determined by X-Ray Diffraction

DOI Web Site 1 Citations 14 References
  • Saka Takashi
    Department of Electrical and Electronic Engineering, School of Engineering, Daido University, Japan
  • Ishida Yoichi
    Department of Electrical and Electronic Engineering, School of Engineering, Daido University, Japan
  • Kanda Masataka
    Department of Electrical and Electronic Engineering, School of Engineering, Daido University, Japan
  • Jin Xiuguang
    Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Japan
  • Maeda Yuya
    Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Japan
  • Fuchi Shingo
    Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Japan
  • Ujihara Toru
    Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Japan
  • Takeda Yoshikazu
    Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Japan
  • Matsuyama Tetsuya
    Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University, Japan
  • Horinaka Hiromichi
    Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University, Japan
  • Kato Toshihiro
    New Business Development Division, Daido Steel Co., Ltd., Japan
  • Yamamoto Naoto
    Graduate School of Engineering, Nagoya University, Japan
  • Mano Atsushi
    Department of Physics, Graduate School of Science, Nagoya University, Japan
  • Nakagawa Yasuhide
    Department of Physics, Graduate School of Science, Nagoya University, Japan
  • Kuwahara Makoto
    Department of Physics, Graduate School of Science, Nagoya University, Japan
  • Okumi Shoji
    Department of Physics, Graduate School of Science, Nagoya University, Japan
  • Nakanishi Tsutomu
    Department of Physics, Graduate School of Science, Nagoya University, Japan
  • Yamamoto Masahiro
    High Energy Accelerator Organization, Japan
  • Ohshima Takashi
    Central Research Laboratory, Hitachi Ltd., Japan
  • Kohashi Teruo
    Central Research Laboratory, Hitachi Ltd., Japan
  • Suzuki Masahiko
    Fundamental Electronics Research Institute, Osaka Electro-Communication University, Japan
  • Hashimoto Michihiro
    Fundamental Electronics Research Institute, Osaka Electro-Communication University, Japan
  • Yasue Tsuneo
    Fundamental Electronics Research Institute, Osaka Electro-Communication University, Japan
  • Koshikawa Takanori
    Fundamental Electronics Research Institute, Osaka Electro-Communication University, Japan

Abstract

The strains in GaAs/GaAsP superlattices used in spin-polarized photocathodes grown on GaAs and GaP (001) substrates were determined by X-ray diffraction. The thicknesses of the GaAs wells and GaAsP barrier layers were also determined. The band structures of the superlattices were calculated on the basis of these experimentally determined strains and layer thicknesses. The thicknesses and band structures were in good agreement with those observed by transmission electron microscopy and photoluminescence, respectively. The strains induced in the GaAs well layers were approximately linearly dependent upon the phosphorous fraction in the GaAsP layer, and the splitting between the heavy hole band and the light hole band of the superlattices grown on GaP substrates was larger than that of superlattices grown on GaAs substrates. In photocathodes grown on GaP substrates, low polarizations were observed, not due to a lack of band splitting, but to depolarization scattering caused by crystal defects, which were different from that induced in superlattices grown on GaAs substrates. [DOI: 10.1380/ejssnt.2010.125]

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