Nano-Scale Characterization of Poly-Si Gate on High-k Gate Stack Structures by Scanning Photoemission Microscopy

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Author(s)

    • Toyoda S.
    • Department of Applied Chemistry, The University of Tokyo, Japan|CREST, Japan Science and Technology Agency, Japan|Synchrotron Radiation Research Organization, The University of Tokyo, Japan
    • Nakamura Y.
    • Department of Applied Chemistry, The University of Tokyo, Japan
    • Horiba K.
    • Department of Applied Chemistry, The University of Tokyo, Japan|CREST, Japan Science and Technology Agency, Japan|Synchrotron Radiation Research Organization, The University of Tokyo, Japan
    • Kumigashira H.
    • Department of Applied Chemistry, The University of Tokyo, Japan|Synchrotron Radiation Research Organization, The University of Tokyo, Japan|PRESTO, Japan Science and Technology Agency, Japan
    • Oshima M.
    • Department of Applied Chemistry, The University of Tokyo, Japan|CREST, Japan Science and Technology Agency, Japan|Synchrotron Radiation Research Organization, The University of Tokyo, Japan
    • Amemiya K.
    • CREST, Japan Science and Technology Agency, Japan|Institute of Materials Structure Science, KEK, Japan

Abstract

We have investigated poly-Si gate pattern on HfO<sub>2</sub>/SiO<sub>2</sub>/Si stack structures by scanning photoemission microscopy using synchrotron radiation. Gate-pattern images have been successfully obtained by scanning the sample position during acquisitions of core-level photoemission spectra. Si 2<i>p</i>, Hf 4<i>f</i>, and O 1<i>s</i> core-level spectra systematically change for different sample positions, which suggests that light source focused by the zone plate is effectively utilized for nano-scale characterization of chemical states in device-pattern structures. We have also demonstrated that etching velocities of HfO<sub>2</sub> films on a Si substrate and shallow trench isolation vary when exposing the poly-Si gate pattern to dry etching processes. [DOI: 10.1380/ejssnt.2011.224]

Journal

  • e-Journal of Surface Science and Nanotechnology

    e-Journal of Surface Science and Nanotechnology (9), 224-227, 2011

    The Surface Science Society of Japan

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