Growth and microstructure of epitaxial Ti3SiC2 contact layers on SiC
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- Tsukimoto Susumu
- World Premier International Research Center, Advanced Institute for Materials Research (WPI-AIMR), Tohoku University
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- Ito Kazuhiro
- Department of Materials Science and Engineering, Kyoto University
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- Wang Zhongchang
- World Premier International Research Center, Advanced Institute for Materials Research (WPI-AIMR), Tohoku University
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- Saito Mitsuhiro
- World Premier International Research Center, Advanced Institute for Materials Research (WPI-AIMR), Tohoku University
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- Ikuhara Yuichi
- World Premier International Research Center, Advanced Institute for Materials Research (WPI-AIMR), Tohoku University Institute of Engineering Innovation, The University of Tokyo
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- Murakami Masanori
- The Ritsumeikan Trust
書誌事項
- タイトル別名
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- Growth and Microstructure of Epitaxial Ti<SUB>3</SUB>SiC<SUB>2</SUB> Contact Layers on SiC
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抄録
Growth and microstructure of ternary Ti3SiC2 compound layers on 4H-SiC, which play am important role in formation of TiAl-based ohmic contacts to p-type SiC, were investigated in this study. The Ti3SiC2 layer was fabricated by deposition of Ti/Al contacts (where a slash “/” indicates the deposition sequence) on the 4H-SiC(0001) substrate and subsequent rapid thermal anneal at 1000°C in ultra high vacuum. After annealing, reaction products and microstructure of the Ti3SiC2 layer were investigated by X ray diffraction analysis and transmission electron microscopy observations in order to understand the growth processes of the Ti3SiC2 layer and determination of the Ti3SiC2/4H-SiC interface structure. The Ti3SiC2 layers with hexagonal plate shape were observed to grow epitaxially on the SiC(0001) surface by anisotropic lateral growth process. The interface was found to have a hetero-epitaxial orientation relationship of (0001)TSC||(0001)S and [0\\bar110]TSC||[0\\bar110]S where TSC and S represent Ti3SiC2 and 4H-SiC, respectively, and have well-defined ledge-terrace structures with low density of misfit dislocations due to an extremely low lattice mismatch of 0.4% between Ti3SiC2 and 4H-SiC.
収録刊行物
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- MATERIALS TRANSACTIONS
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MATERIALS TRANSACTIONS 50 (5), 1071-1075, 2009
公益社団法人 日本金属学会
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詳細情報
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- CRID
- 1390001204249328512
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- NII論文ID
- 10024814721
- 130004454217
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- NII書誌ID
- AA1151294X
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- COI
- 1:CAS:528:DC%2BD1MXotlGisb8%3D
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- ISSN
- 13475320
- 13459678
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- HANDLE
- 2433/109943
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- NDL書誌ID
- 10214255
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- IRDB
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可