Formation and Evolution of Misoriented Grains in a-Plane Oriented Gallium Nitride Layers

• Tokumoto Yuki

  Institute for Materials Research, Tohoku University

• Lee Hyun-Jae

  Center for Interdisciplinary Research, Tohoku University

• Ohno Yutaka

  Institute for Materials Research, Tohoku University

• Yao Takafumi

  Center for Interdisciplinary Research, Tohoku University

• Yonenaga Ichiro

  Institute for Materials Research, Tohoku University

書誌事項

タイトル別名

• Formation and Evolution of Misoriented Grains in <i>a</i>-Plane Oriented Gallium Nitride Layers

抄録

Annealed low-temperature GaN layers grown on r-plane sapphire substrates were examined by X-ray diffraction pole figure measurements. The GaN layers were mainly a-plane oriented, in which misoriented grains with four different orientations were detected. The c-axes of the misoriented grains are tilted from the surface normal by about 35°, which are along the bonds not parallel to the c-axis of the a-plane oriented layers. There was a difference among the peak intensities corresponding to the c-planes of the misoriented grains with the four different orientations. Considering the difference, the relative amount of misoriented grains with each orientation can be predicted. The evolution of the misoriented grains is expected to be controlled by the major polarity.

収録刊行物

• MATERIALS TRANSACTIONS

  MATERIALS TRANSACTIONS 53 (11), 1881-1884, 2012

  公益社団法人 日本金属学会

キーワード

• gallium nitride
• thin films
• X-ray diffraction pole figure measurements

詳細情報

• CRID: 1390001204248889856
• NII論文ID: 10031127175
• NII論文ID: 130004454893
• NII書誌ID: AA1151294X
• DOI: 10.2320/matertrans.ma201221
• ISSN: 13475320
• ISSN: 13459678
• NDL書誌ID: 024042112
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I024042112
• Web Site: https://www.jstage.jst.go.jp/article/matertrans/53/11/53_MA201221/_pdf
• 本文言語コード: en
• データソース種別:
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  • NDL
  • Crossref
  • CiNii Articles
  • KAKEN
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