スパッタ成膜中の Ar, Xe イオン衝撃が Ni 薄膜の特性に及ぼす影響  [in Japanese] Ar, Xe Ion Bombardment Effects on Film Characteristics of Ni Thin Film during Sputter Deposition Process  [in Japanese]

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Author(s)

    • 郡 亜美 Kohri Ami
    • 東海大学大学院工学研究科応用理学専攻 Department of Applied Science, Graduate School of Engineering, Tokai University

Abstract

  Previously, as a means of expressing the effect of ion bombardment, we proposed an ion bombardment parameter <i>P</i><sub><i>i</i></sub> based on the magnitude of the ion momentum and impingement ratio of Ar ions to metal particles. As a result the internal stress of the ferromagnetic films can be controlled by ion bombardment parameter <i>P</i><sub><i>i</i></sub>. In this study, molecular mass effects with various sputtering gases such as Ar and Xe on magnetic thin films are quantitatively discussed with ion bombardment parameter <i>P</i><sub><i>i</i></sub>. The Ni thin films were prepared by the D.C. magnetron sputtering process. Sputtering gases were using Argon (Ar) and Xenon (Xe). Plasma diagnostics was carried out by single Langmuir-probe during the sputter deposition. The internal stress of the films varies linearly with ion bombardment parameter <i>P</i><sub><i>i</i></sub>, regardless of the sputtering gas species. In addition, the magnetostrictive susceptibility of the film is also dependent on <i>P</i><sub><i>i</i></sub>. Internal stress and magnetostrictive properties of Ni thin films could be controlled with ion bombardment parameter <i>P</i><sub><i>i</i></sub>.<br>

Journal

  • Journal of the Japan Institute of Metals and Materials

    Journal of the Japan Institute of Metals and Materials 76(5), 355-358, 2012

    The Japan Institute of Metals and Materials

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