Progress of Resist Materials and Process for hp 2x-nm Devices using EUV Lithography
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- Matsunaga Kentaro
- Semiconductor Leading Edge Technologies, Inc.
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- Oizumi Hiroaki
- Semiconductor Leading Edge Technologies, Inc.
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- Kaneyama Koji
- Semiconductor Leading Edge Technologies, Inc.
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- Shiraishi Gousuke
- Semiconductor Leading Edge Technologies, Inc.
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- Matsumaro Kazuyuki
- Semiconductor Leading Edge Technologies, Inc.
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- Santillan Julius Joseph
- Semiconductor Leading Edge Technologies, Inc.
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- Itani Toshiro
- Semiconductor Leading Edge Technologies, Inc.
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Extreme ultraviolet (EUV) lithography is the leading candidate for the manufacture of semiconductor devices at the hp 22 nm technology node and beyond. The Selete program covers the evaluation of manufacturability for the EUV lithography process. Then, we have begun a yield analysis of hp 2x nm test chips using the EUV1 (Nikon) full-field exposure tool. However, the resist performance does not yet meet the stringent requirements for resolution limit, sensitivity, and line width roughness. We reported on Selete standard resist 4 (SSR4) at the EUVL Symposium in 2009. Although it has better lithographic performance than SSR3 does, pattern collapse limits the resolution to hp 28 nm. To improve the resolution, we need to optimize the process so as to prevent pattern collapse. An evaluation of SSR4 for the hp 2x nm generation revealed that a thinner resist and the use of a tetrabutylammonium hydroxide (TBAH) solution for the developer were effective in mitigating this problem. Furthermore, the use of an underlayer and an alternative rinse solution increased the exposure latitude by preventing pattern collapse when the resist is overexposed. These optimizations improved the resolution limit to hp 22 nm.
収録刊行物
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- Journal of Photopolymer Science and Technology
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Journal of Photopolymer Science and Technology 23 (5), 613-618, 2010
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詳細情報 詳細情報について
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- CRID
- 1390001204325678592
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- NII論文ID
- 130004464842
- 40017186903
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- NII書誌ID
- AA11576862
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- COI
- 1:CAS:528:DC%2BC3cXpsVOhs70%3D
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- ISSN
- 13496336
- 09149244
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- NDL書誌ID
- 10736006
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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