Fabrication Process of EUV-IL Transmission Grating
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- Yamguchi Yuya
- Laboratory of Advanced Science and Technology for Industry, University of Hyogo
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- Fukushima Yasuyuki
- Laboratory of Advanced Science and Technology for Industry, University of Hyogo
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- Iguchi Tekafumi
- Laboratory of Advanced Science and Technology for Industry, University of Hyogo
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- Kinoshita Hiroo
- Laboratory of Advanced Science and Technology for Industry, University of Hyogo
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- Harada Tetsuo
- Laboratory of Advanced Science and Technology for Industry, University of Hyogo
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- Watanabe Takeo
- Laboratory of Advanced Science and Technology for Industry, University of Hyogo
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Abstract
Exposure tool of EUV interference lithography (EUV-IL) has been developing for the EUV resist evaluation for 22 nm and 16 nm nodes below. The fabrication of the transmission grating is a key technology for EUV-IL. The transmission grating for EUV-IL which has no crack and no crumple in the membrane region was fabricated by controlling film stresses of SiO2 and TaN layers. In addition, applying SiO,sub>2</sub> hard mask process, diffraction grating pattern of 50 nm L/S was fabricated. Furthermore, the center stop process was added to the transmission grating fabrication. And using this transmission grating 25 nm hp pattern was replicated on a wafer using EUV-IL. It is confirmed that the SiO2 hard mask process is significant process for the fabrication of 40 nm hp grating which corresponding to 20 nm hp resist pattern on a wafer.
Journal
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- Journal of Photopolymer Science and Technology
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Journal of Photopolymer Science and Technology 23 (5), 681-686, 2010
The Society of Photopolymer Science and Technology(SPST)
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Details 詳細情報について
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- CRID
- 1390282679302375296
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- NII Article ID
- 130004464852
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- NII Book ID
- AA11576862
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- COI
- 1:CAS:528:DC%2BC3cXpsVOhsL0%3D
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- ISSN
- 13496336
- 09149244
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- NDL BIB ID
- 10736176
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- Text Lang
- en
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed