EUV Resist Chemical Reaction Analysis using SR

• Watanabe Takeo

  Center for EUVL, LASTI, University of Hyogo

• Emura Kazuya

  Center for EUVL, LASTI, University of Hyogo

• Shiono Daiju

  Tokyo Ohka Kogyo

• Haruyama Yuichi

  Center for EUVL, LASTI, University of Hyogo

• Muramatsu Yasuji

  Graduate School of Engineering, University of Hyogo

• Ohmori Katsumi

  Tokyo Ohka Kogyo

• Sato Kazufumi

  Tokyo Ohka Kogyo

• Harada Tetsuo

  Center for EUVL, LASTI, University of Hyogo

• Kinoshita Hiroo

  Center for EUVL, LASTI, University of Hyogo

Abstract

The chemical reaction in EUV irradiation of the several photoacid generators (PAGs) which employed triphenylsulfonium (TPS) salts as the cation of PAG, is discussed on the basis of the analysis using the SR absorption spectroscopy in the soft x-ray region. The fluorine atoms of the anion PAGs which have the chemical structure of the imidate type such as TPS-Imidate-1, and TPS-Imidate-2 strongly decomposed under EUV exposure. In the case of these PAG type, it is found that in addition to the ionization reaction, the anion decomposition reaction originated by the photo excitation of the photoacid generator might occur under EUV exposures. Thus the sensitivity seemed to be high comparison to tri-phenylsulfonium perfluorobutanesulfonate (TPS-Nonaflate) under EUV exposure. In the case of tri-phenylsulfonium camphorsulfonate (TPS-Cs), the anion which does not contain fluorine seemed to be very stable under EUV exposure and the sensitivity is lower than TPS-Nonaflate.

Journal

• Journal of Photopolymer Science and Technology

  Journal of Photopolymer Science and Technology 26 (5), 635-641, 2013

  The Society of Photopolymer Science and Technology(SPST)

Keywords

• EUVL
• chemically amplified resist
• photoacid generator
• decomposition of anion of PAG
• SR absorption spectroscopy

Details

• CRID: 1390001204325867776
• NII Article ID: 130004465045
• NII Article ID: 40019713177
• NII Book ID: AA11576862
• DOI: 10.2494/photopolymer.26.635
• COI: 1:CAS:528:DC%2BC3sXhtFChsrnJ
• ISSN: 13496336
• ISSN: 09149244
• NDL BIB ID: 024709857
• Web Site: http://id.ndl.go.jp/bib/024709857
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I024709857
• Web Site: https://www.jstage.jst.go.jp/article/photopolymer/26/5/26_635/_pdf
• Text Lang: en
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed