Comparison of Resist Family Outgassing Characterization between EUV and EB

• Takagi Isamu

  EUVL Infrastructure Development Center, Inc.

• Takahashi Toshiya

  EUVL Infrastructure Development Center, Inc.

• Sugie Norihiko

  EUVL Infrastructure Development Center, Inc.

• Katayama Kazuhiro

  EUVL Infrastructure Development Center, Inc.

• Kikuchi Yukiko

  EUVL Infrastructure Development Center, Inc.

• Shiobara Eishi

  EUVL Infrastructure Development Center, Inc.

• Tanaka Hiroyuki

  EUVL Infrastructure Development Center, Inc.

• Inoue Soichi

  EUVL Infrastructure Development Center, Inc.

• Watanabe Takeo

  Laboratory of Advanced Science and Technology for Industry, University of Hyogo

• Harada Tetsuo

  Laboratory of Advanced Science and Technology for Industry, University of Hyogo

• Kinoshita Hiroo

  Laboratory of Advanced Science and Technology for Industry, University of Hyogo

Abstract

Witness-sample (WS) testing is the most favorable method for the simulation of EUV optics contamination by resist outgassing. Resists are expected to be correctly qualified with this method before they are used in HVM exposure tools. However, the present capacity of outgassing test facilities is insufficient for the total anticipated needs, based on the current capacity of existing EUV exposure tools. This paper defines a resist family for reducing the total number of required outgassing tests. The material contributions to outgassing are discussed on the basis of results obtained with model resists, where two types of WS test systems?high-power EUV light and EB sources?are used. A correlation between these light sources is also discussed.

Journal

• Journal of Photopolymer Science and Technology

  Journal of Photopolymer Science and Technology 26 (5), 673-678, 2013

  The Society of Photopolymer Science and Technology(SPST)

Keywords

• EUV
• EB
• outgassing
• contamination
• witness sample
• resist family

Details

• CRID: 1390001204325862016
• NII Article ID: 130004465050
• NII Article ID: 40019713280
• NII Book ID: AA11576862
• DOI: 10.2494/photopolymer.26.673
• COI: 1:CAS:528:DC%2BC3sXhtFChsrbI
• ISSN: 13496336
• ISSN: 09149244
• NDL BIB ID: 024709993
• Web Site: http://id.ndl.go.jp/bib/024709993
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I024709993
• Web Site: https://www.jstage.jst.go.jp/article/photopolymer/26/5/26_673/_pdf
• Text Lang: en
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed