Quenching of High-Pressure Phases of Silicon Using Femtosecond Laser-driven Shock Wave

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  • TSUJINO Masashi
    Graduate School of Engineering, Osaka University, 2-1 Yamada-Oka, Suita, Osaka 565-0871
  • SANO Tomokazu
    Graduate School of Engineering, Osaka University, 2-1 Yamada-Oka, Suita, Osaka 565-0871
  • OZAKI Norimasa
    Graduate School of Engineering, Osaka University, 2-1 Yamada-Oka, Suita, Osaka 565-0871
  • SAKATA Osami
    Japan Synchrotron Radiation Research Institute / SPring-8, 1-1-1 Kouto, Sayo, Sayo-gun, Hyogo 679-5198
  • OKOSHI Masayuki
    National Defense Academy of Japan, 1-10-20 Hashirimizu, Yokosuka, Kanagawa 239-8686
  • INOUE Narumi
    National Defense Academy of Japan, 1-10-20 Hashirimizu, Yokosuka, Kanagawa 239-8686
  • KODAMA Ryosuke
    Graduate School of Engineering, Osaka University, 2-1 Yamada-Oka, Suita, Osaka 565-0871
  • HIROSE Akio
    Graduate School of Engineering, Osaka University, 2-1 Yamada-Oka, Suita, Osaka 565-0871

Abstract

High-pressure phases which are Β-Sn, Imma and simple hexagonal structures of silicon are quenched using an intense femtosecond laser-driven shock wave. These high-pressure phases have never synthesized in ambient pressure by hydrostatic and conventional shock compression methods. Femtosecond laser was irradiated to single crystal-silicon with no-dopant. We confirmed the existence of these high pressure phases by analyzing the crystalline structure of the femtosecond laser irradiated silicon using grazing incidence synchrotron x-ray diffraction.

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