Formation of MnAs Dots on S-Passivated GaAs(100) Substrates

• Ono K.

  School of Engineering, The University of Tokyo

• Mizuguchi M.

  School of Engineering, The University of Tokyo

• Uragami T.

  School of Engineering, The University of Tokyo

• Mano T.

  School of Engineering, The University of Tokyo

• Fujioka H.

  School of Engineering, The University of Tokyo

• Oshima M.

  School of Engineering, The University of Tokyo

• Tanaka M.

  School of Engineering, The University of Tokyo

• Watanabe Y.

  NTT Laboratories

抄録

We report the formation of nanosize ferromagnetic MnAs dots on S-passivated GaAs by molecular beam epitaxy. The structural and magnetic properties of the dots have been characterized by high resolution scanning electron microscopy, and superconducting quantum interference device magnetometer. The average size and the density of these MnAs dots were 16.3nm and 2.3×10¹⁰/cm³ respectively. These dots show ferromagnetism at low temperature and the Curie temperature is lower than the bulk value.

収録刊行物

• 日本応用磁気学会誌

  日本応用磁気学会誌 23 (1_2), 691-693, 1999

  公益社団法人 日本磁気学会

キーワード

• nanomagnet
• molecular beam epitaxy
• S-passivation
• MnAs
• nano-particle

詳細情報

• CRID: 1390001205092186368
• NII論文ID: 110002810379
• NII論文ID: 130004478413
• NII書誌ID: AN0031390X
• DOI: 10.3379/jmsjmag.23.691
• ISSN: 18804004
• ISSN: 02850192
• ISSN: http://id.crossref.org/issn/02850192
• NDL書誌ID: 4647072
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4647072
• Web Site: http://dl.ndl.go.jp/info:ndljp/pid/10464385
• 本文言語コード: en
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • NDL-Digital
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可