Growth of MnAs on S- and Se-passivated GaAs substrates

• Uragami T.

  School of Engineering. The University of Tokyo

• Ono K.

  School of Engineering. The University of Tokyo

• Mizuguchi M.

  School of Engineering. The University of Tokyo

• Mano T.

  School of Engineering. The University of Tokyo

• Fujioka H.

  School of Engineering. The University of Tokyo

• Oshima M.

  School of Engineering. The University of Tokyo

• Tanaka M.

  School of Engineering. The University of Tokyo

• Watanabe Y.

  NTT Laboratories

抄録

We have grown ferromagnetic MnAs thin films on S- and Se-passivated GaAs substrates by molecular beam epitaxy (MBE). Growth modes of MnAs films on GaAs(100) substrates were changed by the surface treatment. We found that on the clean and the Se-passivated surfaces, MnAs films grow by a layer-by-layer mode. In contrast, on the S-passivated surface MnAs grows by an island growth mode. and polycrystalline films are obtained. We also found that the magnetization of the MnAs film on Se-passivated surface is larger than that on clean and S-passivated surfaces

収録刊行物

• 日本応用磁気学会誌

  日本応用磁気学会誌 23 (1_2), 694-696, 1999

  公益社団法人 日本磁気学会

キーワード

• epitaxial film
• surface passivation
• MBE growth
• MnAs
• magnetic anisotropy

詳細情報

• CRID: 1390282680068896384
• NII論文ID: 110002810380
• NII論文ID: 130004478414
• NII書誌ID: AN0031390X
• DOI: 10.3379/jmsjmag.23.694
• ISSN: 18804004
• ISSN: 02850192
• NDL書誌ID: 4647078
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4647078
• Web Site: http://dl.ndl.go.jp/info:ndljp/pid/10464386
• 本文言語コード: en
• データソース種別:
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  • NDL
  • Crossref
  • NDL-Digital
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可