Control of Electron Spin Relaxation Dynamics and Circularly Polarized Lasing in Semiconductor Lasers

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  • KOH Shinji
    Graduate School of Materials Science, Nara Institute of Science and Technology
  • IBA Satoshi
    Graduate School of Materials Science, Nara Institute of Science and Technology
  • IKEDA Kazuhiro
    Graduate School of Materials Science, Nara Institute of Science and Technology
  • KAWAGUCHI Hitoshi
    Graduate School of Materials Science, Nara Institute of Science and Technology

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Other Title
  • 電子スピン緩和ダイナミクスの制御と半導体レーザの円偏光レーザ発振
  • デンシ スピン カンワ ダイナミクス ノ セイギョ ト ハンドウタイ レーザ ノ エン ヘンコウ レーザ ハッシン

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Abstract

We investigated spin-controlled semiconductor lasers which can emit circularly polarized coherent light by utilizing electron spin polarization and the optical selection rule. We fabricated a (110)-oriented vertical-cavity surface-emitting laser (VCSEL) with GaAs/AlGaAs quantum wells (QWs) and characterized lasing properties of the VCSEL under optical spin injection. Circularly polarized lasing with a high degree of circular polarization of 0.96 in the VCSEL was demonstrated at room temperature originating from a long electron spin relaxation time in the (110) GaAs QWs. We also demonstrated a tenfold modulation of electron spin relaxation time from 4 to 0.3 ns in the (110) GaAs QWs through the Rashba spin-orbit coupling induced by applying an external electric field at room temperature.

Journal

  • Hyomen Kagaku

    Hyomen Kagaku 32 (12), 755-760, 2011

    The Surface Science Society of Japan

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