基板相互作用を援用したグラフェンのナノ構造・物性制御

• 吹留 博一

  東北大学電気通信研究所

書誌事項

タイトル別名

• Nanoscale Control of Structural and Electronic Properties of Graphene through Substrate Interaction
• キバン ソウゴ サヨウ オ エンヨウ シタ グラフェン ノ ナノ コウゾウ ・ ブッセイ セイギョ

抄録

Fusion of graphene with the substrates adequate for device applications is effective to solve the Year 2020 problem in electronics. Epitaxy of graphene on Si substrate (GOS) has been developed because the choice of Si as the substrate brings two merits, excellent electronic properties of graphene and accumulated device technologies of Si. It is found that electronic properties of GOS can be tuned by substrate interaction through surface termination as well as surface symmetry whose importance has been pointed by the author. Furthermore, epitaxy of GOS on microfabricated substrates has been developed because the GOS technology is to be conformed with future device integrations. GOS on microfabricated substrates with various facets will enable to produce nanoscale multifunctionalization by using the single material, graphene.

収録刊行物

• 表面科学

  表面科学 33 (10), 546-551, 2012

  公益社団法人 日本表面科学会

キーワード

• graphene
• substrate interaction
• time reversal symmetry
• microfabrication
• SiC

詳細情報

• CRID: 1390001206457366400
• NII論文ID: 130004486704
• NII論文ID: 10031123359
• NII書誌ID: AN00334149
• DOI: 10.1380/jsssj.33.546
• COI: 1:CAS:528:DC%2BC3sXit1Gmtr8%3D
• ISSN: 18814743
• ISSN: 03885321
• NDL書誌ID: 024054212
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I024054212
• 本文言語コード: ja
• データソース種別:
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• 抄録ライセンスフラグ: 使用不可