Nanoscale Control of Structural and Electronic Properties of Graphene through Substrate Interaction

• FUKIDOME Hirokazu

  Research Institute of Electrical Communication, Tohoku University

Bibliographic Information

Other Title

• 基板相互作用を援用したグラフェンのナノ構造・物性制御
• キバン ソウゴ サヨウ オ エンヨウ シタ グラフェン ノ ナノ コウゾウ ・ ブッセイ セイギョ

Abstract

Fusion of graphene with the substrates adequate for device applications is effective to solve the Year 2020 problem in electronics. Epitaxy of graphene on Si substrate (GOS) has been developed because the choice of Si as the substrate brings two merits, excellent electronic properties of graphene and accumulated device technologies of Si. It is found that electronic properties of GOS can be tuned by substrate interaction through surface termination as well as surface symmetry whose importance has been pointed by the author. Furthermore, epitaxy of GOS on microfabricated substrates has been developed because the GOS technology is to be conformed with future device integrations. GOS on microfabricated substrates with various facets will enable to produce nanoscale multifunctionalization by using the single material, graphene.

Journal

• Hyomen Kagaku

  Hyomen Kagaku 33 (10), 546-551, 2012

  The Surface Science Society of Japan

Keywords

• graphene
• substrate interaction
• time reversal symmetry
• microfabrication
• SiC

Details

• CRID: 1390001206457366400
• NII Article ID: 130004486704
• NII Article ID: 10031123359
• NII Book ID: AN00334149
• DOI: 10.1380/jsssj.33.546
• COI: 1:CAS:528:DC%2BC3sXit1Gmtr8%3D
• ISSN: 18814743
• ISSN: 03885321
• NDL BIB ID: 024054212
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I024054212
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
  • KAKEN
• Abstract License Flag: Disallowed